Dong-Sing Wuu
Fellows of SPIE, OSA, IOP
Department of Materials Science and Engineering,
National Chung Hsing University, Taichung 40227, Taiwan
Title of Keynote Speech
Passive-Matrix Micro-LED Displays with Advanced Process Integration
Abstract of Keynote Speech
The light-emitting diode (LED) is a self-emissive device with high response time, brightness, and color saturation properties. It possesses the high thermal and humid stability, which is suitable as a next generation displays. However, for achieving the high resolution, the pixel size should be downsized into a few micron scale. In this study, the pixel size of micro-LED was investigated from 100×100 μm2 to a 10×10 μm2, where a laser direct writing technique was employed. The direct writing technique does not need the photomask and can improve the exposure accuracy with minimized image distortion. However, for the smaller pixel sizes, the plasma damage from the dry-etched sidewall of pixel became more evident and would degrade the light extraction efficiency. Therefore, the surface passivation processes e.g. spin coating, PECVD, ALD have plays an important role in determining the leakage current levels. As a result, the external quantum efficiency of 10×10 μm2 pixel size can achieve 18.81% under a current density of 136.8 A/cm2. The brightness of blue micro-LED display with a pixel size of 20 x 20 μm2 was 516 cd/m2 at 3 V under the full lighting state. Using the advanced process integration, the performance of the blue, green and red passive-matrix micro-LED displays with 150-250 pixel-per-inch resolution will be described. Future applications of these small-size micro-LED displays will also be discussed.